EXPERIMENT 6 FET CHARACTERISTIC CURVES ________________________________________ Bring a diskette to save your data. ________________________________________ OBJECT: The objective of this lab is to investigate the DC characteristics and operation of a field effect transistor (FET). The FET recommended to be used in this lab is 2N5486 n-channel FET. • Gathering data for the DC characteristics ________________________________________ APPARATUS: Dual DC Power Supply, Voltmeter, and 1k resistors, 2N5486 N-Channel FET. ________________________________________ THEORY: A JFET (Junction Field Effect Transistor) is a three terminal device (drain, source, and gate) similar to the BJT. The difference between them is that the JFET is a voltage controlled constant current device, whereas BJT is a current controlled current source device. Whereas for BJT the relationship between an output parameter, iC, and an input parameter, iB, is given by a constant , the relationship in JFET between an output parameter, iD, and an input parameter, vGS, is more complex. PROCEDURE: Measuring ID versus VDS (Output Characteristics) 1. Build the circuit shown below. 2. Obtain the output characteristics i.e. ID versus VDS. a. Set VGS = 0. Vary the voltage across drain (VDS) from 0 to 8 V with steps of 1 V and measure the corresponding drain current (ID). b. Repeat the procedure for different values of VGS. (0V, -0.5V, -1V, -1.5V, -2V, -2.5V, -3.0V, -3.5V, -4.0V). 3. Record the values in Table 1 and plot the graph ID vs. VGS. VGS 0 -0.5 -1.0 -1.5` -2.0 -2.5 -3.0 -3.5 -4.0 VDS ID ID ID ID ID ID ID ID ID 0 0 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0mA 1 0 0.7 mA 0.7 mA 0.66 mA 0.6 mA 0.6 mA 0.5 0.1mA 0mA 2 0 1.5 mA 1.3 mA 1.3mA 1.2 mA 1.1 mA 0.7 0.1mA 0mA 3 0 2.1 mA 2.6 mA 1.9 mA 1.8 mA 1.5 mA 0.8 mA 0.1mA 0mA 4 0 2.7 mA 2.6 mA 2.5 mA 2.4 mA 1.7 mA 0.8 mA 0.1mA 0mA 5 0 3.4 mA 3.3 mA 3.1 mA 2.8 mA 1.8 mA 0.9 mA 0.1mA 0mA 6 0 4.1 mA 3.4 mA 3.7 mA 3.2 mA 1.9 mA 0.9 mA 0.1mA 0mA 7 0 4.7 mA 4.5 mA 4.2 mA 3.4 mA 1.9 mA 0.9 mA 0.1mA 0mA 8 0 5.3 mA 5.1 mA 6.6 mA 3.5 mA 2.0 mA 0.9 mA 0.1mA 0mA Table 1. vds=0:8; id=[0 6.2e-3 9.7e-3 11.3e-3 11.9e-3 12.2e-3 12.3e-3 12.3e-3 12.32e-3]; plot(vds,id);grid on;hold on id2=[0 5.23e-3 8.05e-3 9.15e-3 9.57e-3 9.77e-3 9.88e-3 9.9e-3 9.92e-3]; plot(vds,id2);grid on;hold on id3=[0 4.29e-3 6.41e-3 7.17e-3 7.46e-3 7.60e-3 7.67e-3 7.73e-3 7.76e-3]; plot(vds,id3);grid on;hold on ________________________________________ Measuring ID versus VGS (Transconductance Characteristics) 1. For the same circuit, obtain the transconductance characteristics. i.e. ID versus VGS. a. Set a particular value of voltage for VDS, i.e. 5V. Start with a gate voltage VGS of 0 V, and measure the corresponding drain current (ID). b. Then decrease VGS in steps of 0.5 V until VGS is -4V. c. At each step record the drain current. VDS = 5 V VGS ID 0 3.42 mA -0.5 3.36 mA -1.00 3.27 mA -1.50 3.12 mA -2.00 2.79 mA -2.50 1.84 mA -3.00 0.71 mA -3.50 0.11 mA -4.00 0 mA Table 2. 2. Plot the graph with ID versus VGS using Excel, MATLAB, or some other program. Discussion Questions—Make sure you answer the following questions in your discussion. Use all of the data obtained to answer the following questions: 1. Discuss the output and transconductance curves obtained in lab? Are they what you expected? 2. Are the output characteristics spaced evenly? Should they be? 3. What are the applications of a JFET?

## EXPERIMENT 6 FET CHARACTERISTIC CURVES ________________________________________ Bring a diskette to save your data. ________________________________________ OBJECT: The objective of this lab is to investigate the DC characteristics and operation of a field effect transistor (FET). The FET recommended to be used in this lab is 2N5486 n-channel FET. • Gathering data for the DC characteristics ________________________________________ APPARATUS: Dual DC Power Supply, Voltmeter, and 1k resistors, 2N5486 N-Channel FET. ________________________________________ THEORY: A JFET (Junction Field Effect Transistor) is a three terminal device (drain, source, and gate) similar to the BJT. The difference between them is that the JFET is a voltage controlled constant current device, whereas BJT is a current controlled current source device. Whereas for BJT the relationship between an output parameter, iC, and an input parameter, iB, is given by a constant , the relationship in JFET between an output parameter, iD, and an input parameter, vGS, is more complex. PROCEDURE: Measuring ID versus VDS (Output Characteristics) 1. Build the circuit shown below. 2. Obtain the output characteristics i.e. ID versus VDS. a. Set VGS = 0. Vary the voltage across drain (VDS) from 0 to 8 V with steps of 1 V and measure the corresponding drain current (ID). b. Repeat the procedure for different values of VGS. (0V, -0.5V, -1V, -1.5V, -2V, -2.5V, -3.0V, -3.5V, -4.0V). 3. Record the values in Table 1 and plot the graph ID vs. VGS. VGS 0 -0.5 -1.0 -1.5` -2.0 -2.5 -3.0 -3.5 -4.0 VDS ID ID ID ID ID ID ID ID ID 0 0 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0.002mA 0mA 1 0 0.7 mA 0.7 mA 0.66 mA 0.6 mA 0.6 mA 0.5 0.1mA 0mA 2 0 1.5 mA 1.3 mA 1.3mA 1.2 mA 1.1 mA 0.7 0.1mA 0mA 3 0 2.1 mA 2.6 mA 1.9 mA 1.8 mA 1.5 mA 0.8 mA 0.1mA 0mA 4 0 2.7 mA 2.6 mA 2.5 mA 2.4 mA 1.7 mA 0.8 mA 0.1mA 0mA 5 0 3.4 mA 3.3 mA 3.1 mA 2.8 mA 1.8 mA 0.9 mA 0.1mA 0mA 6 0 4.1 mA 3.4 mA 3.7 mA 3.2 mA 1.9 mA 0.9 mA 0.1mA 0mA 7 0 4.7 mA 4.5 mA 4.2 mA 3.4 mA 1.9 mA 0.9 mA 0.1mA 0mA 8 0 5.3 mA 5.1 mA 6.6 mA 3.5 mA 2.0 mA 0.9 mA 0.1mA 0mA Table 1. vds=0:8; id=[0 6.2e-3 9.7e-3 11.3e-3 11.9e-3 12.2e-3 12.3e-3 12.3e-3 12.32e-3]; plot(vds,id);grid on;hold on id2=[0 5.23e-3 8.05e-3 9.15e-3 9.57e-3 9.77e-3 9.88e-3 9.9e-3 9.92e-3]; plot(vds,id2);grid on;hold on id3=[0 4.29e-3 6.41e-3 7.17e-3 7.46e-3 7.60e-3 7.67e-3 7.73e-3 7.76e-3]; plot(vds,id3);grid on;hold on ________________________________________ Measuring ID versus VGS (Transconductance Characteristics) 1. For the same circuit, obtain the transconductance characteristics. i.e. ID versus VGS. a. Set a particular value of voltage for VDS, i.e. 5V. Start with a gate voltage VGS of 0 V, and measure the corresponding drain current (ID). b. Then decrease VGS in steps of 0.5 V until VGS is -4V. c. At each step record the drain current. VDS = 5 V VGS ID 0 3.42 mA -0.5 3.36 mA -1.00 3.27 mA -1.50 3.12 mA -2.00 2.79 mA -2.50 1.84 mA -3.00 0.71 mA -3.50 0.11 mA -4.00 0 mA Table 2. 2. Plot the graph with ID versus VGS using Excel, MATLAB, or some other program. Discussion Questions—Make sure you answer the following questions in your discussion. Use all of the data obtained to answer the following questions: 1. Discuss the output and transconductance curves obtained in lab? Are they what you expected? 2. Are the output characteristics spaced evenly? Should they be? 3. What are the applications of a JFET?

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Name: Date: Document Analysis Worksheet 1. Title of the document: 2. Date(s) the document was originally produced: 3. Author of this document: 4. Type of document: 5. Is this a primary source or a secondary source? 6. Who is the audience or intended recipient of the document? Be specific. 7. Why do you think this document was written? Be specific. Write in your own words. 8. List three things the author/document said that you think are important. Be specific. Write in your own words. 1. 2. 3. 9. List two things the document tells you about life in the United States at the time the document was written (if a primary source) or the time described in the document (if a secondary source). Be specific. Write in your own words. 1. 2. 10. Write a question to the author that is left unanswered by the document. Be specific. Write in your own words.

## Name: Date: Document Analysis Worksheet 1. Title of the document: 2. Date(s) the document was originally produced: 3. Author of this document: 4. Type of document: 5. Is this a primary source or a secondary source? 6. Who is the audience or intended recipient of the document? Be specific. 7. Why do you think this document was written? Be specific. Write in your own words. 8. List three things the author/document said that you think are important. Be specific. Write in your own words. 1. 2. 3. 9. List two things the document tells you about life in the United States at the time the document was written (if a primary source) or the time described in the document (if a secondary source). Be specific. Write in your own words. 1. 2. 10. Write a question to the author that is left unanswered by the document. Be specific. Write in your own words.

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Nilsson & Riedel 9e, p. 348, Problem 9.12. The expression for the steady-state voltage and current at the terminals of the circuit seen in the figure are vg(t) = 300 V cos (5000  rad/s • t + 78°) ig(t) = 6 A sin (5000  rad/s • t + 123°) a) What is the impedance seen by the source? b) By how many microseconds is the current out of phase with the voltage?

## Nilsson & Riedel 9e, p. 348, Problem 9.12. The expression for the steady-state voltage and current at the terminals of the circuit seen in the figure are vg(t) = 300 V cos (5000  rad/s • t + 78°) ig(t) = 6 A sin (5000  rad/s • t + 123°) a) What is the impedance seen by the source? b) By how many microseconds is the current out of phase with the voltage?

What are two important classes of regular-expression-based applications: lexical analyzers and text search.

## What are two important classes of regular-expression-based applications: lexical analyzers and text search.

Lexical analyzers : It is a component of complier … Read More...